KSA709

KSA709 KSA709 High Voltage Amplifier Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -160 -150 -8 -700 800 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -100V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -200mA, IB= -20mA IC= -200mA, IB= -20mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz 70 -0.3 -0.9 50 10 Min. -160 -150 -8 -0.1 -0.1 400 -0.4 -1.0 V V MHz pF Typ. Max. Units V V V µA µA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2004 Fairchild Semiconductor Corporat...