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KSA931

Fairchild Semiconductor

PNP Epitaxial Silicon Transistor

KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO=...


Fairchild Semiconductor

KSA931

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Description
KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching Complement to KSC2331 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=1W 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -80 -60 -8 -700 1 150 -55 ~ 150 Units V V V mA W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Productor Output Capacitance Test Condition IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -60V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -50mA IC= -500mA, IB= -50mA IC= -500mA, IB= -50mA VCE= -10V, IC= -50mA VCB= -10V, IE=0, f=1MHz 40 -0.3 -0.9 100 13 Min. -80 -60 -8 -0.1 -0.1 240 -0.7 -1.2 V V MHz pF Typ. Max. Units V V V µA µA * Pulse Test: PW≤350µs, Duty cycle≤2% hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA931 Typical Character...




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