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KSA940

Fairchild Semiconductor

PNP Epitaxial Silicon Transistor

KSA940 KSA940 Vertical Deflection Output Power Amplifier • Complement to KSC2073 1 TO-220 1.Base 2.Collector 3.Emitt...


Fairchild Semiconductor

KSA940

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Description
KSA940 KSA940 Vertical Deflection Output Power Amplifier Complement to KSC2073 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Ratings - 150 - 150 -5 - 1.5 - 0.5 1.5 25 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO IEBO hFE VCE (sat) VBE(on) fT Cob Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance VCB = - 120V, IE = 0 VEB = - 5V, IC = 0 VCE = - 10V, IC = - 500mA IC = - 500mA, IB = - 50mA VCE = - 10V, IC = - 500mA VCE = - 10V, IC = - 500mA VCB = - 10V, IE = 0 f = 1MHz Min. 40 - 0.65 Typ. 75 - 0.75 4 55 Max. - 10 - 10 140 - 1.5 - 0.85 Units µA µA V V MHz pF ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics IC[A], COLLECTOR CURRENT -2.0 -1.6 IB = -15=0m-1A00mA IB -1.2 = -50mA IB -0.8 IB = -40mA IB = -30mA IB = -20mA IB = -15mA IB = -10mA IB = -5mA -0.4 -0.0 -0 IB = 0mA -4 -8 -12 -16 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristi...




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