KSB1017

KSB1017 KSB1017 Power Amplifier Applications Complement to KSD1408 1 TO-220F 1.Base 2.Collector 3.Emitter PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 25 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance IC = - 50mA, IB = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz Min. -80 40 15 Typ. -1 -1 9 130 Max. - 30 - 100 240 Units V µA µA - 1.7 - 1.5 V V MHz pF hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics IC[A], COLLECTOR CURRENT -4.0 -3.2 -2.4 -1.6 IB = -140mA IB = -180mA IB = -160mA IB = -120mA IB = -100mA IB = -80mA IB = -60mA IB = -40mA IB = -20mA -0.8 -0.0 -0 IB = 0A ...