KSB1098

KSB1098 KSB1098 Low Frequency Power Amplifier Low Speed Switchng Industrial Use Complement to KSD1589 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -5 -8 - 0.5 2 20 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤300µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC= - 3A VCE = - 2V, IC = - 5A IC = - 3A, IB = - 3mA IC = - 3A, IB = - 3mA VCC = - 50V, IC = - 3A IB1 = - IB2 = - 3mA RL = 17Ω 0.5 1 1 2000 500 Min. Typ. Max. -1 -3 15K - 1.5 -2 V V µs µs µs Units µA mA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE1 R 2000 ~ 5000 O 3000 ~ 7000 Y 5000 ~ 15000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1098 Typical Characteristics VCE(sat)[V],VBE(sat)[V] SATURATION VOLTAGE -5 Ic[A]...