KSB546
KSB546
TV Vertical Deflection Output
• • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A ...
KSB546
KSB546
TV Vertical Deflection Output
Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W (TC=25°C) Complement to KSD401
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC)Y Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 200 - 150 -5 -2 25 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = - 500µA, IE = 0 IC = - 10mA, IB = 0 IE = - 500uA, IC = 0 VCB = - 150V, IE = 0 VCE = - 10V, IE = - 0.4A IC = - 500mA, IB = - 50mA VCE = - 10V, IC = - 0.4A 5 40 Min. - 200 - 150 -5 - 50 240 -1 V MHz Typ. Max. Units V V V µA
hFE Classification
Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB546
Typical Characteristics
-1.0 -0.9
1000
VCE = -10V
IC[A], COLLECTOR CURRENT
-0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.0 -0
IB = -8mA
IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = ...