KSB596

KSB596 KSB596 Power Amplifier Applications Complement to KSD526 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 30 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = - 50mA, IB = 0 IE = - 10mA, IC = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz 3 130 40 15 -1 -1 Min. - 80 -5 - 70 - 100 240 - 1.7 - 1.5 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB596 Typical Characteristics -4.0 IB = -140mA IB = -160mA -1 IB = 20m A 1000 0m IB = -10 A VCE = -5V Ic[A], COLLECTOR CURRENT -3.2 IB = -1...