KSB707/708
KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching • Industrial Use • Complement to KSD568/569
1...
KSB707/708
KSB707/708
Low Frequency Power Amplifier
Low Speed Switching Industrial Use Complement to KSD568/569
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature : B707 : B708 Value - 80 - 60 - 80 - 7.0 - 7.0 - 15 - 3.5 40 1.5 150 - 55 ~ 150 Units V V V V A A A W W °C °C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 3A VCE = - 1V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A 40 20 Typ. Max. - 10 - 10 200 - 0.5 - 1.5 V V Units µA µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Cassification
Classification hFE1 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB707/708
Typical Characteristics
-1.0
1000
IB = -20mA
VCE = -1V
IC[A], COLLECTOR CURRENT
-0.8
IB = -18mA IB = -16mA IB = -14mA
hFE, DC CURRENT GAIN
-50
100
-0.6
IB...