KSB744

KSB744/744A KSB744/744A Audio Frequency Power Amplifier Complement to KSD794/KSD794A 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : KSB744 : KSB744A Value -70 -45 -60 -5 -3 -5 -0.6 1 10 150 -55 ~ 150 Units V V V V A A A W W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = -45V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -0.5A IC = -1.5A, IC = -0.15A IC = -1.5A, IB = -0.15A VCE = -5V, IC = -0.1A VCB = -10V, IE = 0 f = 1MHz 30 60 120 100 -0.5 -0.8 45 60 Min. Typ. Max. -1 -1 320 -2 -2 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Cassification Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB744/744A Typical Characteristics -1.6 -1000 VCE = -5V Ic[A], COLLECTOR C...