KSB834

KSB834 KSB834 Low Frequency Power Amplifier Complement to KSD880 1 TO-220 2.Collector 3.Emitter 1.Base PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 60 - 60 -7 -3 - 0.5 30 1.5 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO BVCEO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON TSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 IC = - 50mA, IB = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF µs µs µs Min. Typ. Max. - 100 - 100 Units µA µA V hFE Classification Classification hFE1 O 60 ~ 120 Y 100 ~ 200 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSB834 Typical Characteristics -5.0 -4.5 1000 EMITTER COMMON TC=2...