KSC2073

KSC2073 — NPN Epitaxial Silicon Transistor KSC2073 NPN Epitaxial Silicon Transistor September 2011 Features TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : VCBO = 150V 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value 150 150 5 1.5 25 150 - 55 to 150 Units V V V A W °C °C Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC = 500μA, IE = 0 IC = 10mA, IB = 0 IE = 500μA, IC = 0 VCB = 120V, IE = 0 VCE = 10V, IC = 0.5A IC = 500mA, IB = 50mA VCE = 10V, IC = 0.5A VCB =10V, IE = 0, f = 1MHz Min. 150 150 5 40 Typ. 75 4 50 Max. 10 140 1 Units V V V μA V MHz pF hFE Classification Classification hFE H1 40 ~ 80 H2 60 ~ 125 © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 1 www.fairchildsemi.com KSC2073 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics IC[A], COLLECTOR CURRENT 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 IB=8mA...