KSC2310

KSC2310 KSC2310 High Voltage Power Amplifier Collector-Base Voltage : VCBO=200V Current Gain Bandwidth Product : fT=100MHz 1 TO-92L 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 200 150 5 50 800 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VCE=5V, IC=10mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz 100 3.5 5 40 Min. 200 150 5 0.1 240 0.5 V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2310 Typical Characteristics 50 IB = 1000µA IB = 500µA IB = 400µA 1000 VCE = 5V IC[mA], COLLECTOR CURRENT 40 30 IB = 200µA IB = 150µA IB = 100µA hFE, DC CURRENT GAIN IB = 300µA 100 20 10 0 0 2 4 6 8 10 12 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTA...