KSC2669

KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP High Current Gain Bandwidth Product : fT=250MHz (TYP.) 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 30 200 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE (on) VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=100µA, IE=0 IC=5mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz 100 40 0.65 0.70 0.1 250 2.0 3.2 Min. 35 30 4 0.1 0.1 240 0.75 0.4 V V MHz pF Typ. Max. Units V V V µA µA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2669 Typical Characteristics 10 IB = 90µA IB = 80µA 1000 VCE=12V IC[mA], COLLECTOR CURRENT 8 6 IB = 60µA IB = 50µA hFE, DC CURRENT GAIN IB = 70µA 100 ...