KSC2682

KSC2682 KSC2682 Audio Frequency Power Amplifier Complement to KSA1142 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 180 180 5 100 1.2 8 150 -55 ~ 150 Units V V V mA W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition VCB = 180V, IE = 0 VEB = 3V, IC= 0 VCE = 5V, IC = 1mA VCE = 5V, IC = 10mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA VCE = 10V, IC = 20mA VCB = 10V, IE = 0 f = 1MHz VCE = 10V, IC = 1mA RS = 10KΩ, f = 1kHz 90 100 190 200 0.12 0.8 200 3.2 4 5.0 Min. Typ. Max. 1.0 1.0 320 0.5 1.5 V V MHz pF dB Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classificntion Classification hFE2 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2682 Typical Characteristics 160 1000 Pulse Test VCE= 5V Ic[mA], COLLECTOR CURRENT 140 hFE, DC CURRENT GAIN 120 100 IB=500uA IB =450uA IB=400uA 100 80 IB =...