KSC3073

KSC3073 KSC3073 Power Amplifier Application Complement to KSA1243 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 30 30 5 3 0.6 1 15 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 2.5A IC = 2A, IB = 0.2A VCE = 2V,IC = 0.5A VCE = 2V, IC = 0.5A VCB = 10V, f =1MHz 70 25 0.3 0.75 100 35 Min. 30 5 1 1 240 0.8 1 V V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE1 O 70 ~ 140 Y 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. B, September 2002 KSC3073 Typical Characteristics 4.0 1000 3.5 IC[A], COLLECTOR CURRENT 2.5 IB= 20m A hFE, DC CURRENT GAIN 3.0 IB =4 0m A 3 A 0m 100 VCE = 2V I B= 2.0 mA I B = 15 1.5 ...