KSC3296

KSC3296 KSC3296 Power Amplifier Applications Complement to KSA1304 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 150 5 1.5 0.5 20 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE VCE(sat) VBE(on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 120V, IE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 500mA IC = 500mA, IB = 50mA VCE = 10V, IC = 500mA VCE = 10V, IC = 500mA VCB = 10V, f = 1MHz 0.65 0.75 4 35 40 75 Min. Typ. Max. 10 10 140 1.5 0.85 V V MHz pF Units µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3296 Typical Characteristics 1000 10 VCE(sat)[V], SATURATION VOLTAGE VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 10 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 10 25 IC MAX. (Pulse) m 10 IC[A], COLLECTOR CURRENT IC MAX. (DC) D 1 1s PC[W], POWER DISSIPAT...