KSC3503

KSC3503 KSC3503 CRT Display, Video Output High Voltage : VCEO=300V Low Reverse Transfer Capacitance : Cre=1.8pF @ VCB=30V 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (TA=25°C) Junction Temperature Storage Temperature Value 300 300 5 100 200 7 1.2 150 - 55 ~ 150 Units V V V mA mA W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collecto- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 30V, IC = 10mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz 150 2.6 1.8 40 Min. 300 300 5 0.1 0.1 320 0.6 1 V V MHz pF pF Typ. Max. Units V V V µA µA hFE Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 ©2000 Fairchild Semiconductor Internati...