KSC3953

KSC3953 KSC3953 CRT Display Video Output High Current Gain Bandwidth Product : fT=400MHz(Typ.) High Collector-Emitter Voltage : VCEO=120V Low Reverse Transfer Capacitance : Cre=1.7pF(Typ.) 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 120 120 3 200 400 1.3 8 150 - 55 ~ 150 Units V V V mA mA W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVEBO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC = 10µA, IB = 0 IC = 1mA, RBE = ∞ IE = 100µA, IC = 0 VCB = 80V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA IC = 30mA, IB = 3mA IC = 30mA, IB = 3mA VCE = 10V,IC = 50mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz 400 2.1 1.7 40 20 Min. 120 120 3 0.1 1.0 120 1.0 1.0 V V MHz pF pF Typ. Max. Units V V V µA µA hFE Classificntion Cl...