KSC5024

KSC5024 KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 10 20 3 90 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(Sat) VBE(Sat) Cob fT ton ts tf Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3.5A, IB1=-IB2=1.4A L = 500µH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE=5V, IC = 4A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCB = 10V, IE=0, f = 1MHz VCE = 10V, IC=0.8A VCC = 200V IC= 5IB1=-2.5I B2=5A RL = 40Ω 120 18 0.5 3 0.3 15 8 Min. 800 500 7 500 10 10 50 1 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classificntion Classification ...