KSC5026

www.DataSheet4U.com KSC5026 KSC5026 High Voltage and High Reliability High Speed Switching Wide SOA 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 40 Units V V V A A A W °C °C DataShee DataSheet4U.com 150 - 55 ~ 150 Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 0.75A IB1 = -IB2 = 0.15A L = 5mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.75A, IB = 0.15A IC = 0.75A, IB = 0.15A VCB =10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.1A VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω 35 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Prod...