KSC5039
KSC5039
High Voltage Power Switch Switching Application
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon T...
KSC5039
KSC5039
High Voltage Power Switch Switching Application
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 400 7 5 10 3 70 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC=0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC =150V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10 1.5 2.0 V V MHz pF µs µs µs Min. 800 400 7 10 10 µA µA Typ. Max. Units V V
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5039
Typical Characteristics
2.0 1.8
IB = 180mA
IC[A]...