KSC5321F

KSC5321F KSC5321F High Voltage and High Reliability High speed Switching Wide Safe Operating Area 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(Tc=25) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 4 40 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 3.1 62.5 Unit °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5321F Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Cib tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =1mA, IC =...