KSC5338DW

KSC5338D/KSC5338DW KSC5338D/KSC5338DW D2-PAK High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK B Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 1000 450 12 5 10 2 4 75 150 - 55 ~ 150 Units V V V A A A A W °C °C * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Rating 1.65 62.5 270 °C Unit °C/W ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5338D/KSC5338DW Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current G...