KSC5367F

KSC5367F KSC5367F High Voltage and High Reliability High speed Switching Wide Safe Operating Area High Collector-Base Voltage 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Curren (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 1600 800 12 3 6 2 4 40 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 3.1 62.5 Unit °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5367F Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 0.5mA, IE = 0 IC = 5mA, IB = 0 IC =0.5mA, IC = 0 VCB = 1,600V, IE = 0 VEB = 12V, IC = 0 VCE = 3V, IC = 0.4A VCE = 10V, IC = 5mA IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 1A, IB = 0.2A IC = 500mA, IB = 50mA VCB =10V, IE...