KSC5402D

KSC5402D/KSC5402DT KSC5402D/KSC5402DT High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 B D-PAK Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) : D-PAK * : TO-220 Junction Temperature Storage Temperature Value 1000 450 12 2 5 1 2 30 50 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose ; 1/8” from Case for 5 Seconds Rating TO-220 2.5 62.5 270 D-PAK 4.17 * 50 270 °C Unit °C/W * Mounted on 1” square PCB (FR4 ro G-10 Material) ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Brea...