KSC5405F

KSC5405F KSC5405F High Voltage Power Switching Applications 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value 1000 450 9 5 10 2 4 40 150 - 65 ~ 150 Units V V V A A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO (sus) ICES IEBO hFE VCE(sat) VBE(sat) tON tSTG tF Parameter *Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage: Turn On Time Storage Time Fall Time Test Condition IC = 100mA, IB = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 VCE=5V, IC=0.6A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL=100Ω 10 Min. 450 Typ. Max. 1 10 40 1.5 1.3 1 4 0.8 V V Units V mA mA µs µs µs * Pulsed Test: PW = 300uS, duty cycle = 1.5% ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5405F Typical Characteristics 100 2.0 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC=5IB IC=5IB 1.5 10 1.0 0.5 1 0.1 1 10 0.0 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1...