KSD1047

KSD1047 KSD1047 Audio Power Amplifier DC to DC Converter High Current Capability High Power Dissipation Complement to KSB817 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 160 140 6 8 16 80 150 - 40 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG * Pulse test: PW=20µs Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = 5mA, IE = 0 IC = 10mA, RBE =∞ IE = 5mA, IC = 0 VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 5A, IB = 0.5A VCE = 5V, IC = 1A VCE = 5V, IC = 1A VCB = 10V, f = 1MHz VCC = 20V IC = 1A = 10IB1 = -10IB2 RL = 20Ω Min. 160 140 6 Typ. Max. Units V V V 0.1 0.1 60 20 2.5 1.5 15 210 0.26 0.68 6.88 200 mA mA V V MHz pF µs µs µs * hFE Classificntion Classification hFE1 O 60 ~ 120 Y 1...