KSD1222

KSD1222 KSD1222 Power Amplifier Applications High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 60 40 5 3 0.3 15 1 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Test Condition IC = 25mA, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 3A IC = 2A, IB = 4mA IC = 2A, IB = 4mA VCC = 30V, IC = 3A IB1 = -IB2 = 6mA RL = 10Ω 0.1 1 0.2 2000 1000 1.5 2 V V µs µs µs Min. 40 Typ. Max. 20 2.5 Units V µA mA ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSD1222 Typical Characteristics 5 10000 VCE = 2V IC[A], COLLECTOR CURRENT 4 3 IB =300 µA 2 275µ A 250µ A 225 µ A 200µ A hFE, DC CURRENT GAIN 5 1000 1 IB = 175µ A IB = 0 0 0 1 2 3 ...