KSD1273

KSD1273 KSD1273 High hFE, AF Power Amplifier ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 80 60 6 3 6 1 2 40 150 - 55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO ICEO IEBO hFE VCE(sat) fT Parameter Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 25mA, IB = 0 VCB = 80V, IE = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A 30 500 Min. 60 Typ. Max. 100 100 100 2500 1 V MHz Units V µA µA µA hFE Classification Classification hFE Q 500 ~ 1000 P 800 ~ 1500 O 1200 ~ 2500 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD1273 Typical Characteristics 2.0 1.8 10000 VCE = 4V IB = 1.2mA IB = 1mA IB = 800uA IB = 600uA IB = 400uA Ic[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 hFE, DC CURRENT GAIN 1000 ...