Power Amplifier. KSD1406 Datasheet

KSD1406 Amplifier. Datasheet pdf. Equivalent

Part KSD1406
Description Low Frequency Power Amplifier
Feature KSD1406 KSD1406 Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Compleme.
Manufacture Fairchild Semiconductor
Datasheet
Download KSD1406 Datasheet




KSD1406
KSD1406
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
60
60
7
3
0.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
IC = 50mA, IB = 0
VCB = 60V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 30
Min.
60
60
20
Typ.
0.4
0.7
3
70
0.8
1.5
0.8
Max.
100
100
300
Units
V
µA
µA
1V
1V
MHz
pF
µs
µs
µs
hFE1 Classification
Classification
hFE1
O
60 ~ 120
Y
100 ~ 200
G
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000



KSD1406
Typical Characteristics
4
IB = 90mA IB = 80mA
3
I = 70mA
B IB = 60mA
I = 50mA
B
IB = 40mA
2 I = 30mA
B
I = 20mA
B
1 IB = 10mA
I = 0mA
B
0
012345678
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10
I = 10 I
CB
1
0.1
0.01
0.001
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
10
I max(pulse)
C
I (max)
C
1
DC
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
V = 5V
CE
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
4
V = 5V
CE
3
2
1
0
0.0 0.4 0.8 1.2
V [V], BASE-EMITTER VOLTAGE
BE
Figure 4. Base-Emitter Voltage
1.6
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000







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