Amplifier Applications. KSD1408 Datasheet

KSD1408 Applications. Datasheet pdf. Equivalent

Part KSD1408
Description Power Amplifier Applications
Feature KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 1 TO-220F 2.Collector 3.Emit.
Manufacture Fairchild Semiconductor
Datasheet
Download KSD1408 Datasheet




KSD1408
KSD1408
Power Amplifier Applications
• Complement to KSB1017
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
80
80
5
4
0.4
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = 50mA, IB = 0
VCB = 80V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A. IB = 0.3A
VCE = 5V, IC = 3A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
Min.
80
40
15
Typ.
50
0.45
1
8
90
Max.
30
100
240
Units
V
µA
µA
1.5 V
1.5 V
MHz
pF
hFE1 Classification
Classification
hFE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000



KSD1408
Typical Characteristics
4.0
3.2
I
=
B
240mA
IB
=
200mI BA=
160mA
I
B
=
120mA
I
B
=
IB
100mA
= 80mA
I = 60mA
B
2.4
IB = 40mA
1.6 I = 20mA
B
0.8
I = 0mA
0.0 B
012345
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10
I = 10 I
CB
1
0.1
0.01
0.001
0.01
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
I max(pulse)
C
I (max)
C
1
DC
0.1
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
V = 5V
CE
10
1
0.001
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
4
V = 5V
CE
3
2
1
0
0.0 0.4 0.8 1.2 1.6
V [V], BASE-EMITTER VOLTAGE
BE
Figure 4. Collector Output Capacitance
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000







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