KSD1589
KSD1589
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use • Complement to KSB1098
1
TO-220F ...
KSD1589
KSD1589
Low Frequency Power Amplifier
Low Speed Switching Industrial Use Complement to KSB1098
1
TO-220F 2.Collector 3.Emitter
1.Base
NPN Silicon Darlington
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 7 5 8 0.5 1.5 20 150 - 55 ~ 150 Units V V V A A A W W °C °C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO h FE1 hFE2 VCE(sat) VBE(sat) tON tstg tf Parameter Collector Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VCE = 2V, IC = 3A VCE = 2V, IC = 5A IC = 3A, IB = 3mA VCC⋅=⋅50V, IC = 3A IB1 = - IB2 = 3mA RL = 16.7Ω IC = 3A, IB = 3mA Min. 2K 500 Typ. 6K 0.9 1.6 1 3.5 1.2 Max. 1 15K 1.5 2 V V µs µs µs Units µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Classification hFE1 R 2000 ~ 5000 O 3000 ~ 7000 Y 5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1589
Typical Characteristics
IB = 1mA
5
10k
A
0. 7
m
VCE = 2V
IC[A], COLLECTOR CURRENT
4
IB = 0.5
IB
mA
=
hFE, DC CURRENT GAIN
IB = 0
1k
3
IB =...