KSD1691

KSD1691 KSD1691 Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25°C) Complementary to KSB1151 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 5 8 1 1.3 20 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5Ω 60 100 50 0.1 0.9 0.2 1.1 0.2 Min. Typ. Max. 10 10 400 0.3 1.2 1 2.5 1 V V µs µs µs Units µA µA *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse test: PW≤50µs, duty Cycle≤2% Pulsed hFE Classificntion Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691 Typical Charac...