KSD1692

KSD1692 KSD1692 Feature High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C) TO-126 2.Collector 3.Base 1 1. Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 8 3 5 1.3 15 150 - 55 ~ 150 Units V V V A A A W W °C * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1.5A VCE = 2V, IC = 3A IC = 1.5A, IB = 1.5mA IC = 1.5A, IB = 1.5mA VCC = 40V, IC = 1.5A IB1 = - IB2 = 1.5mA RL = 27Ω 2K 1K 0.9 1.5 0.5 2 1 Min. Typ. Max. 10 2 20K 1.2 2 V V µs µs µs Units µA mA * Pulse test: PW≤350µs, duty Cycle≤2% Pulsed hFE Classificntion Classification hFE1 O 2000 ~ 5000 Y 4000 ~ 12000 G 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1692 Typical Characteristics 5 100000 Ic[A], COLLECTOR CURRENT 4 ...