KSD227

KSD227 KSD227 Low Frequency Power Amplifier Complement to KSA642 Collector Power Dissipation : PC=400mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 25 5 300 400 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA IC=300mA, IB=30mA 70 0.14 Min. 30 25 5 0.1 0.1 400 0.4 V Typ. Max. Units V V V µA µA hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSD227 Typical Characteristics 50 45 IB = 450µA IB = 400µA 1000 VCE = 1V IC[mA], COLLECTOR CURRENT 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA 6 7 8 9 10 hFE, DC CURRENT GAIN IB = 350µA 100 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT ...