KSD363

KSD363 KSD363 B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=300V Collector Current : IC=6A Collector Dissipation : PC=40W(TC=25°C) TO-220 2.Collector 3.Emitter 1 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 120 8 6 40 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) VBE(sat) fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC =1mA, IE = 0 IC = 20mA, IB = 0 IE = 1mA, IC = 0 VCB = 250V, IE = 0 VCE = 5V, IC = 1A IC = 1A, IB = 0.1A IC = 1A, IB = 0.1A VCE = 5V, IC = 0.5A 10 40 Min. 300 120 8 1 240 1 1.5 V V MHz Typ. Max. Units V V V mA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD363 Typical Characteristics 5 1000 IC[A], COLLECTOR CURRENT 4 3 IB = 25mA 2 hFE, DC CURRENT GAIN IB = 50mA IB = 45mA IB = 40mA IB = 35mA IB = 30mA VCE = 5V 100 IB = 20mA IB = 15mA 1 IB = 10mA IB =...