KSD5041

KSD5041 KSD5041 AF Output Amplifier for Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=1mA, IB=0 IC=10µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 50 180 150 Min. 20 7 0.1 0.1 600 1 V MHz pF Typ. Max. Units V V µA µA hFE Classification Classification hFE P 180 ~ 270 Q 230 ~ 380 R 340 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSD5041 Typical Characteristics 2.4 800 700 IC[A], COLLECTOR CURRENT 2.0 IB = 7mA VCE= 2V Ta = 25℃ 1.6 IB = 5mA 1.2 hFE, DC CURRENT GAIN IB = 6mA 600 500 IB = 4mA IB = 3mA 400 300 0.8 IB = 2mA 0.4 200 IB = 1mA 100 0.0 0....