Document
KSD526 NPN Epitaxial Silicon Transistor
KSD526
NPN Epitaxial Silicon Transistor
Power Amplifier Applications
• Complement to KSB596
April 2006
1 TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC IB PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO IEBO BVCEO BVEBO hFE
VCE(sat) VBE(on) fT Ccb
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain - Bandwidth Product Collector Output Capacitance
VCB.