Document
KSD5707
KSD5707
High Voltage Color Display Horizontal Deflection Output
• High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs (Max.)
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 6 16 60 150 - 55 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Fall Time Test Condition VCB= 800V, IE= 0 VEB= 5V, IC= 0 VCE= 5V, IC= 1A VCE= 5V, IC= 3A IC= 4A, IB= 0.8A IC= 4A, IB= 0.8A VCE= 10V, IC= 1A VCC=200V, IC=4A, IB1= 0.8A, IB2= -1.6A RL=50Ω 3 0.4 10 5 2 Min. Typ. Max. 10 1 30 15 5 1.5 V V MHz µs Units µA mA
Thermal Characteristics
Symbol Rθjc Thermal Resistance Characteristics Junction to Case Rating 2.08 Unit °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Typical Characteristics
10
100
VCE = 5V
IC[A], COLLECTOR CURRENT
8
IB = 2.0A
6
1.8A 1.6A 1.4A
1.2A 1.0A 800mA
hFE, DC CURRENT GAIN
10
4
600mA 400mA
2
IB = 200mA
0 0
2
4
6
8
10
1 0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
8
VCE(sat)[V], SATURATION VOLTAGE
IC = 5 I B
VCE = 5V
7
IC[A], COLLECTOR CURRENT
1 10
6
1
5
4
3
0.1
2
1
0.01 0.1
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
ICP
SINGLE PULSE TC=25℃ 100us 300us
tSTG, tF [µs], TURN OFF TIME
IC[A], COLLECTOR CURRENT
10
tSTG
1
10ms 1ms
1
0.1
tF
DC OPERATING
0.1
IC = 4A IB1 = 0.8A VCC = 200V
0.01 0.1 1 10
0.01 1 10 100 1000 10000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Typical Characteristics (Continued)
100
80
IB2 = -IA,Constant @ IC > 5A
70
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
100 1000 10000
60
10
50
40
30
1
20
IC = 5IB1 = - 5IB2 L = 500µH SINGLE PULSE
0.1 10
10
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
KSD5707
Package Demensions
TO-3PF
5.50 ±0.20
4.50 ±0.20
15.50 ±0.20
ø3.60 ±0.20
3.00 ±0.20 (1.50)
10.00 ±0.20
10
°
26.50.