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KSD5707 Dataheets PDF



Part Number KSD5707
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Transistor
Datasheet KSD5707 DatasheetKSD5707 Datasheet (PDF)

KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs (Max.) 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=.

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KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs (Max.) 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 800 6 6 16 60 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Fall Time Test Condition VCB= 800V, IE= 0 VEB= 5V, IC= 0 VCE= 5V, IC= 1A VCE= 5V, IC= 3A IC= 4A, IB= 0.8A IC= 4A, IB= 0.8A VCE= 10V, IC= 1A VCC=200V, IC=4A, IB1= 0.8A, IB2= -1.6A RL=50Ω 3 0.4 10 5 2 Min. Typ. Max. 10 1 30 15 5 1.5 V V MHz µs Units µA mA Thermal Characteristics Symbol Rθjc Thermal Resistance Characteristics Junction to Case Rating 2.08 Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 KSD5707 Typical Characteristics 10 100 VCE = 5V IC[A], COLLECTOR CURRENT 8 IB = 2.0A 6 1.8A 1.6A 1.4A 1.2A 1.0A 800mA hFE, DC CURRENT GAIN 10 4 600mA 400mA 2 IB = 200mA 0 0 2 4 6 8 10 1 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 8 VCE(sat)[V], SATURATION VOLTAGE IC = 5 I B VCE = 5V 7 IC[A], COLLECTOR CURRENT 1 10 6 1 5 4 3 0.1 2 1 0.01 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 ICP SINGLE PULSE TC=25℃ 100us 300us tSTG, tF [µs], TURN OFF TIME IC[A], COLLECTOR CURRENT 10 tSTG 1 10ms 1ms 1 0.1 tF DC OPERATING 0.1 IC = 4A IB1 = 0.8A VCC = 200V 0.01 0.1 1 10 0.01 1 10 100 1000 10000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 KSD5707 Typical Characteristics (Continued) 100 80 IB2 = -IA,Constant @ IC > 5A 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 100 1000 10000 60 10 50 40 30 1 20 IC = 5IB1 = - 5IB2 L = 500µH SINGLE PULSE 0.1 10 10 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 KSD5707 Package Demensions TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50.


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