Document
KSD985/986
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 60 80 8.0 1.5 3.0 0.15 1.0 10 150 - 55 ~ 150 V V V A A A W W °C °C Value 150 Units V
* PW≤300µs, Duty Cycle10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition VCB = 60V, IE = 0 VCE = 60V, RBE = 51Ω @ TC = 125°C VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA mA
Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
hFE Classification
Classification hFE2 R 2000 ~ 5000 O 4000 ~ 10000 Y 8000 ~ 30000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD985/986
Typical Characteristics
2.0
IB = 220uAIB = 200uA I = 160uA IB = 180uA B IB = 140uA
10000
VCE = 2V
IC[A], COLLECTOR CURRENT
1.6
1.2
IB = 100uA
hFE, DC CURRENT GAIN
5.0
IB = 120uA
1000
0.8
IB = 80uA
0.4
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
160
IC = 1000 IB
140
dT(%), IC DERATING
120
VBE(sat)
100
1
80
S/b
L im
ite d
60
Di ss
ip
V CE(sat)
40
at ion
Li m
20
ite d
0.1 0.1
0 1 10 0 25 50
o
75
100
125
150
175
200
IC[A], COLLECTOR CURRENT
TC[ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Derating Curve Of Safe Operating Areas
2.50 2.25
10
u 30
IC[A], COLECTOR CURRENT
2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 10 20 30 40 50 60 70 80 90 100
IC[A], COLLECTOR CURRENT
1
D is
si p a t io nL i mi
3m s DC
30 0 1m us s
0 10
s
us
te d
b S/ m Li
0.1
d it e
0.01 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Areas
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD985/986
Typical Characteristics (Continued)
16
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PC[W], POWER DISSI.