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KSD985 Dataheets PDF



Part Number KSD985
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Audio Frequency Power Amplifier
Datasheet KSD985 DatasheetKSD985 Datasheet (PDF)

KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°.

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KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 60 80 8.0 1.5 3.0 0.15 1.0 10 150 - 55 ~ 150 V V V A A A W W °C °C Value 150 Units V * PW≤300µs, Duty Cycle10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition VCB = 60V, IE = 0 VCE = 60V, RBE = 51Ω @ TC = 125°C VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classification Classification hFE2 R 2000 ~ 5000 O 4000 ~ 10000 Y 8000 ~ 30000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Typical Characteristics 2.0 IB = 220uAIB = 200uA I = 160uA IB = 180uA B IB = 140uA 10000 VCE = 2V IC[A], COLLECTOR CURRENT 1.6 1.2 IB = 100uA hFE, DC CURRENT GAIN 5.0 IB = 120uA 1000 0.8 IB = 80uA 0.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 100 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 160 IC = 1000 IB 140 dT(%), IC DERATING 120 VBE(sat) 100 1 80 S/b L im ite d 60 Di ss ip V CE(sat) 40 at ion Li m 20 ite d 0.1 0.1 0 1 10 0 25 50 o 75 100 125 150 175 200 IC[A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Derating Curve Of Safe Operating Areas 2.50 2.25 10 u 30 IC[A], COLECTOR CURRENT 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 10 20 30 40 50 60 70 80 90 100 IC[A], COLLECTOR CURRENT 1 D is si p a t io nL i mi 3m s DC 30 0 1m us s 0 10 s us te d b S/ m Li 0.1 d it e 0.01 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Areas Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Typical Characteristics (Continued) 16 14 PC[W], POWER DISSI.


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