KSE13005F

KSE13005F KSE13005F High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 4 8 2 30 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 2A IB1 = - IB2 = 0.4A RL = 125Ω 4 0.8 4 0.9 65 10 8 Min. 400 Typ. Max. 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF *Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13005F Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1...