KSE13006/13007
KSE13006/13007
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Switching Regu...
KSE13006/13007
KSE13006/13007
High Voltage Switch Mode Application
High Speed Switching Suitable for Switching
Regulator and Motor Control
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : KSE13006 : KSE13007 : KSE13006 : KSE13007 Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA
IEBO hFE VCE(sat)
VBE (sat) Cob fT tON tSTG tF
*Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
©2000 Fairchild Semiconductor International
Rev. A1, Dec...