Document
KSE170/171/172
KSE170/171/172
Low Power Audio Amplifier Low Current, High Speed Switching Applications
1
TO-126 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172
1. Emitter
Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 ~ 150
Units V V V V V V V A A A W W °C °C
VCEO
Collector-Emitter Voltage
VEBO IC ICP IB PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breaksown Voltage : KSE170 : KSE171 : KSE172 Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 Test Condition IC = 10mA, IB = 0 Min. -40 -60 -80 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA
ICBO
VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, TC = 150°C VCB = - 80V, IE = 0, TC = 150°C VCB = - 100V, IE = 0, TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA VCE = - 1V, IC = - 500mA VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = 0.1MHz 50
IEBO hFE
Emitter Cut-off Current DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
-0.3 -0.9 -1.7 -1.5 -2.0 -1.2 50
V V V V V V MHz pF
VBE(sat) VBE(on) fT Cob
Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
KSE170/171/172
Typical Charactristics
VCE = -1V
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-2.0 -1.8 -1.6 -1.4 -1.2 -1.0
hFE, DC CURRENT GAIN
100
VBE(sat) IC/IB=10
-0.8 -0.6 -0.4
V BE@VCE= -1V
IC/IB=10
-0.2
IC/IB=5
V CE(sat)
-0.1 -1 -10 -100
10 -0.1 -1
-0.0 -0.01
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
1000
f=0.1MHZ IE =0
Cob[pF], CAPACITANCE
tD,tR[ns], TURN ON TIME
100
100
tR
tD
10
10
1 -0.1
-1
-10
-100
1 -0.01
-0.1
-1
-10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
-10
tF,tSTG[ns], TURN OFF TIME
0µ 10
tSTG
IC[A], COLLECTOR CURRENT
50 0µ
s
s
-1
DC
50m
s
100
tF
-0.1
KSE170 KSE171 KSE172 VCEMAX.
-0.01 -1 -10 -100
10 -0.1 -1
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
KSE170/171/172
Typical Characteristics (Contin.