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KSE170 Dataheets PDF



Part Number KSE170
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PNP Epitaxial Silicon Transistor
Datasheet KSE170 DatasheetKSE170 Datasheet (PDF)

KSE170/171/172 KSE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 1. Emitter Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ.

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KSE170/171/172 KSE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 1. Emitter Value - 60 - 80 - 100 - 40 - 60 - 80 -7 -3 -6 -1 12.5 1.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breaksown Voltage : KSE170 : KSE171 : KSE172 Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 Test Condition IC = 10mA, IB = 0 Min. -40 -60 -80 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA ICBO VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, TC = 150°C VCB = - 80V, IE = 0, TC = 150°C VCB = - 100V, IE = 0, TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA VCE = - 1V, IC = - 500mA VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = 0.1MHz 50 IEBO hFE Emitter Cut-off Current DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage -0.3 -0.9 -1.7 -1.5 -2.0 -1.2 50 V V V V V V MHz pF VBE(sat) VBE(on) fT Cob Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE170/171/172 Typical Charactristics VCE = -1V VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 hFE, DC CURRENT GAIN 100 VBE(sat) IC/IB=10 -0.8 -0.6 -0.4 V BE@VCE= -1V IC/IB=10 -0.2 IC/IB=5 V CE(sat) -0.1 -1 -10 -100 10 -0.1 -1 -0.0 -0.01 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 f=0.1MHZ IE =0 Cob[pF], CAPACITANCE tD,tR[ns], TURN ON TIME 100 100 tR tD 10 10 1 -0.1 -1 -10 -100 1 -0.01 -0.1 -1 -10 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 1000 -10 tF,tSTG[ns], TURN OFF TIME 0µ 10 tSTG IC[A], COLLECTOR CURRENT 50 0µ s s -1 DC 50m s 100 tF -0.1 KSE170 KSE171 KSE172 VCEMAX. -0.01 -1 -10 -100 10 -0.1 -1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE170/171/172 Typical Characteristics (Contin.


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