KSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/8...
