KSH30C

KSH30/30C KSH30/30C General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP30 and TIP30C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSH30 : KSH30C VCEO Collector-Emitter Voltage : KSH30 : KSH30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature - 40 - 100 - 40 - 100 -5 -1 -3 - 0.4 15 1.56 150 - 65 ~ 150 V V V V V A A A W W °C °C Value Units VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSH30 : KSH30C Collector Cut-off Current : KSH30 : KSH30C ICES Collector Cut-off Current : KSH30 : KSH30C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 0.2A VCE = - 4V, IC = - 1A IC = - 1A, IB = - 125mA VCE = - 4A, IC = - 1A VCE = - 10V, IC = - 200mA 3 40 15 - 20 - 20 -1 75 - 0.7 - 1.3 V V MHz µA µA mA VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 - 50 - 50 µA µA Test Condition IC = - 30mA, ...