Document
KSH340
KSH340
High Voltage Power Transistors D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix)
1
D-PAK 1.Base
1
I-PAK 3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 300 300 3 0.5 0.75 15 1.56 150 - 65 ~ 150 Units V V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) ICEO IEBO hFE Parameter * Collector Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 1mA, IB = 0 VCB = 300V, IE =0 VEB = 3V, IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 0.1 0.1 240 Units V mA mA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH340
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 10V
IC = 10 IB
hFE, DC CURRENT GAIN
100
1
V BE(sat)
V CE(sat)
0.1
10
1 1 10 100 1000
0.01 10 100 1000
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
24
ICP (max)
21
IC[mA], COLLECTOR CURRENT
IC(max)
PC[W], POWER DISSIPATION
10 0µ s s 50 0µ
18
1m
100
15
s
DC
12
9
10
6
3
1 10 100 1000
0 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH340
Package Dimensions
D-PAK
6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50)
0.70 ±0.20
2.30 ±0.10 0.50 ±0.10
0.60 ±0.20
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
0.91 ±0.10
0.80 ±0.20
MAX0.96 2.30TYP [2.30±0.20]
0.76 ±0.10 2.30TYP [2.30±0.20]
0.89 ±0.10
0.50 ±0.10 1.02 ±0.20 2.30 ±0.20
(0.70)
(0.90) (0.10) (3.05)
6.10 ±0.20
9.50 ±0.30
2.70 ±0.20
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002
(1.00)
6.60 ±0.20 (5.34) (5.04) (1.50)
MIN0.55
KSH340
Package Dimensions (Continued)
I-PAK
6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20
±0.20
±0.20
0.60
0.70
±0.10
6.10
±0.20
0.80
±0.20
1.80
MAX0.96 0.76 ±0.10
9.30
±0.30
2.30TYP [2.30±0.20]
2.30TYP [2.30±0.20]
0.50 ±0.10
©2002 Fairchild Semiconductor Corporation
16.10
±0.30
Dimensions in Millimeters
Rev. A4, October 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FAST.