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KSH340 Dataheets PDF



Part Number KSH340
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Transistor
Datasheet KSH340 DatasheetKSH340 Datasheet (PDF)

KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Diss.

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KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 300 300 3 0.5 0.75 15 1.56 150 - 65 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE Parameter * Collector Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = 1mA, IB = 0 VCB = 300V, IE =0 VEB = 3V, IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 0.1 0.1 240 Units V mA mA * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH340 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 10V IC = 10 IB hFE, DC CURRENT GAIN 100 1 V BE(sat) V CE(sat) 0.1 10 1 1 10 100 1000 0.01 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 24 ICP (max) 21 IC[mA], COLLECTOR CURRENT IC(max) PC[W], POWER DISSIPATION 10 0µ s s 50 0µ 18 1m 100 15 s DC 12 9 10 6 3 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH340 Package Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 KSH340 Package Dimensions (Continued) I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. A4, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FAST.


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