KSH50

KSH47/50 KSH47/50 High Voltage and High Reliability D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP47 and TIP50 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Emitter Voltage : KSH47 : KSH50 Collector-Emitter Voltage : KSH47 : KSH50 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature Value 350 500 250 400 5 1 2 0.6 15 1.56 150 - 65 ~ 150 Units V V V V V A A A W W °C °C VCEO VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : KSH47 : KSH50 Collector Cut-off Current : KSH47 : KSH50 ICES Collector Cut-off Current : KSH47 : KSH50 IEBO hFE VCE(sat) VBE(sat) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE = 350, VEB = 0 VCE = 500, VEB = 0 VBE = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10A, IC = 1A VCE =10V, IC = 0.2A 10 30 10 0.1 0.1 1 150 1 1.5 V V MHz mA mA mA VCE = 150V, IB = 0 VCE = 300V, IB = 0 0.2 0.2 mA mA Test Condition IC = 30mA, IB = 0 Min. 250 400 Max. Units...