KSP05

KSP05/06 KSP05/06 Amplifier Transistor Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V Collector Dissipation: PC (max)=625mW Complement to KSP55/56 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCEO Collector-Emitter Voltage : KSP05 : KSP06 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 60 80 4 500 625 150 -55~150 V V V mA mW °C °C 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSP05 : KSP06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP05 : KSP06 ICEO hFE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP05/06 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 1V IC = 10 IB hFE, DC CURRENT GAIN 1 V BE(sat) 100 0.1...