KSP13

KSP13/14 KSP13/14 Darlington Transistor Collector-Emitter Voltage: VCES=30V Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA f=100MHz 125 5K 10K 10K 20K 1.5 2.0 V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1M 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain ...