KSP24

KSP24 KSP24 VHF Transistor 1 TO-92 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO IEBO IC PC TJ TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Derate Above 25°C Junction Temperature Storage Temperature Thermal Resistance, Junction to Ambient Value 40 30 4.0 100 350 2.8 135 -55~150 357 Units V V V mA mW mW/°C °C °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE fT Cob GCE GCE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Output Capacitance Conversion Gain (213 to 45MHz) Conversion Gain (60 to 45MHz) Test Condition IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VCE=10V, IC=8mA VCE=10V, IC=8mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=20V, IC=8mA Oscillator Injection=150mV VCC=20V, IC=8mA Oscillator Injection=150mV 19 24 30 400 620 0.25 24 29 0.36 MHz pF dB dB Min. 40 30 4.0 50 Typ. Max. Units V V V nA ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSP24 Typical Characteristics VCE = 10V VCE(sat),VBE(sat)[mA], SATURATION VOLTAGE 1000 10000 IC = 10IB hFE, DC CURRENT GAIN 100 1000 VBE(sat) VCE (sat) 100 10 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 IC[mA], COLL...